BSC0911NDATMA1 vs BSC066N06NSATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSC0911NDATMA1 sa pamamagitan ng Infineon at BSC066N06NSATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | BSC0911NDATMA1 | BSC066N06NSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 25V | — |
| Configuration | Dual N-Channel (2 N-CH) | — |
| Drain-Source Voltage (VDS) | 25 V | 60 V |
| Continuous Drain Current (ID) | 18 A | — |
| Pulsed Drain Current (IDM) | 30 A | 256 A |
| Power Dissipation (PD) | 1 W | — |
| Packhaging | PG-TISON-8 (8-PowerTDFN) | PG-TDSON-8-6 (TDSON EP) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Temperature na Operasyon | -55C to +150C (junction) | — |
| Channel Type | N-Channel Enhancement Mode | — |
| Technology | OptiMOS trench MOSFET | OptiMOS 5 60 V trench-gate |
| Gate Threshold (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| RDS(on) max @ VGS=10V | [DATA_NEEDED: RDS(on) at 10V VGS] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | 26 nC (typ) |
| Tindminan RoHS | Compliant | Compliant |
| Level ng MSL | [DATA_NEEDED: MSL rating] | 1 |
| Continuous Drain Current (ID) at TC=25°C | — | 64 A |
| Continuous Drain Current (ID) at TC=100°C | — | 45 A |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=10V | — | 6.6 mΩ (max) |
| Gate Threshold Voltage (VGS(th)) | — | 1.7 V (typ) |
| Power Dissipation (PD) at TC=25°C | — | 46 W |
| Power Dissipation (PD) at TA=25°C | — | 2.5 W |
| Thermal Resistance, Junction-to-Case (RθJC) | — | 1.3 °C/W |
| Temperature ng Junction na Operasyon | — | -55°C to +150°C |