BSC097N06NSATMA1 vs BSC070N10NS5ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC097N06NSATMA1 disebabkan oleh Infineon dan BSC070N10NS5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC097N06NSATMA1 BSC070N10NS5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series OptiMOS 5 —
Part Status Active —
FET Type N-Channel —
Drain-to-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at Tc=25C 46 A —
Continuous Drain Current (ID) at Ta=25C [DATA_NEEDED: ID at Ta=25C PCB-mounted] —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM peak value] —
RDS(on) max at VGS=10 V 9.7 mOhm —
Gate Threshold Voltage (VGS(th) typ) [DATA_NEEDED: VGS(th) typical value] —
Gate Charge (Qg typ) [DATA_NEEDED: total gate charge Qg] —
Power Dissipation at Ta=25C 2.5 W —
Power Dissipation at Tc=25C 36 W —
Suhu Hubungan Operasi -55C to +150C —
Kemasan / Case PG-TDSON-8-6 (SuperSO8 5x6 mm) —
Jenis Pemasangan Surface Mount Surface Mount
Technology OptiMOS 5 (Trench) OptiMOS 5 (N-channel trench)
Status RoHS Compliant Compliant
Aras MSL 1 (Unlimited) 1 (per JEDEC J-STD-020)
Avalanche Rated Yes (EAS per datasheet) —
Drain-Source Voltage (VDS) max — 100 V
Continuous Drain Current (ID) at TC=25C — 80 A
RDS(on) max @ VGS=10V — 7 mOhm
Gate-Source Voltage (VGS) max — 20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: typical VGS(th) value]
Total Gate Charge (Qg) — [DATA_NEEDED: typical Qg]
Power Dissition at TC=25C (Ptot) — 83 W
Power Dissipation at TA=25C — 2.5 W
Gambaran Suhu Hubungan Operasi — -55 C to +150 C
Kemasan — PG-TDSON-8-7 (SuperSO8 5x6 mm)
Lead-Free — Yes
Typical Application — Synchronous rectification in SMPS

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