BSC097N06NSATMA1 vs BSC070N10NS5ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSC097N06NSATMA1 sa pamamagitan ng Infineon at BSC070N10NS5ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
BSC097N06NSATMA1 BSC097N06NSATMA1 - 60V N-Channel OptiMOS 5 MOSFET | Infineon

BSC097N06NSATMA1 - 60V N-Channel OptiMOS 5 MOSFET | Infineon

BSC097N06NSATMA1 ✓ Nakahanda
Infineon
BSC070N10NS5ATMA1 BSC070N10NS5ATMA1 - 100V 7mOhm OptiMOS 5 N-MOSFET | Infineon

BSC070N10NS5ATMA1 - 100V 7mOhm OptiMOS 5 N-MOSFET | Infineon

BSC070N10NS5ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BSC097N06NSATMA1 BSC070N10NS5ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies —
Series OptiMOS 5 —
Part Status Active —
FET Type N-Channel —
Drain-to-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at Tc=25C 46 A —
Continuous Drain Current (ID) at Ta=25C [DATA_NEEDED: ID at Ta=25C PCB-mounted] —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM peak value] —
RDS(on) max at VGS=10 V 9.7 mOhm —
Gate Threshold Voltage (VGS(th) typ) [DATA_NEEDED: VGS(th) typical value] —
Gate Charge (Qg typ) [DATA_NEEDED: total gate charge Qg] —
Power Dissipation at Ta=25C 2.5 W —
Power Dissipation at Tc=25C 36 W —
Temperature ng Junction na Operasyon -55C to +150C —
Packhaging / Kaso PG-TDSON-8-6 (SuperSO8 5x6 mm) —
Uri ng Pagpapasok Surface Mount Surface Mount
Technology OptiMOS 5 (Trench) OptiMOS 5 (N-channel trench)
Tindminan RoHS Compliant Compliant
Level ng MSL 1 (Unlimited) 1 (per JEDEC J-STD-020)
Avalanche Rated Yes (EAS per datasheet) —
Drain-Source Voltage (VDS) max — 100 V
Continuous Drain Current (ID) at TC=25C — 80 A
RDS(on) max @ VGS=10V — 7 mOhm
Gate-Source Voltage (VGS) max — 20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: typical VGS(th) value]
Total Gate Charge (Qg) — [DATA_NEEDED: typical Qg]
Power Dissition at TC=25C (Ptot) — 83 W
Power Dissipation at TA=25C — 2.5 W
Hanay ng Temperature ng Junction na Operasyon — -55 C to +150 C
Packhaging — PG-TDSON-8-7 (SuperSO8 5x6 mm)
Lead-Free — Yes
Typical Application — Synchronous rectification in SMPS

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