BSC097N06NSATMA1 vs BSC360N15NS3GATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC097N06NSATMA1 disebabkan oleh Infineon dan BSC360N15NS3GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC097N06NSATMA1 BSC360N15NS3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 —
Part Status Active —
FET Type N-Channel —
Drain-to-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at Tc=25C 46 A —
Continuous Drain Current (ID) at Ta=25C [DATA_NEEDED: ID at Ta=25C PCB-mounted] —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM peak value] —
RDS(on) max at VGS=10 V 9.7 mOhm —
Gate Threshold Voltage (VGS(th) typ) [DATA_NEEDED: VGS(th) typical value] —
Gate Charge (Qg typ) [DATA_NEEDED: total gate charge Qg] —
Power Dissipation at Ta=25C 2.5 W —
Power Dissipation at Tc=25C 36 W —
Suhu Hubungan Operasi -55C to +150C —
Kemasan / Case PG-TDSON-8-6 (SuperSO8 5x6 mm) —
Jenis Pemasangan Surface Mount Surface Mount
Technology OptiMOS 5 (Trench) OptiMOS 3 (N-Channel Trench MOSFET)
Status RoHS Compliant Compliant
Aras MSL 1 (Unlimited) 1
Avalanche Rated Yes (EAS per datasheet) —
Part Number — BSC360N15NS3GATMA1
Drain-Source Voltage (VDS) — 150 V
Continuous Drain Current (ID) at Tc — 33 A
On-Resistance RDS(on) max at VGS=10V — 36 mOhm
Power Dissipation (PD) at Tc — 74 W
Gate Threshold Voltage (VGS th) typ — 3.0 V
Total Gate Charge (Qg) typ — [DATA_NEEDED: Qg value]
Kemasan — PG-TDSON-8-1 (SuperSO8, 5x6 mm)
Gambaran Suhu Operasi — -55°C to +150°C (junction)
Avalanche Energy Rated — Yes
Lead-Free — Yes

Laporan Datasheet & Sumber

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