BSC100N10NSFGATMA1 vs BSC027N10NS5ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC100N10NSFGATMA1 disebabkan oleh Infineon dan BSC027N10NS5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
BSC100N10NSFGATMA1 - 100V OptiMOS N-Channel MOSFET, 10mΩ | Infineon
BSC100N10NSFGATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | BSC100N10NSFGATMA1 | BSC027N10NS5ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | NRND |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS | — |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | OptiMOS 5 (100V) |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID), Ta | 11.4 A | — |
| Continuous Drain Current (ID), Tc | 90 A | — |
| Power Dissipation (PD), Tc | 156 W | — |
| Drain-Source On-Resistance (RDS(on)) max | 10 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th) value] | — |
| Kemasan | PG-TDSON-8-1 (SuperSO8 5x6) | PG-TSON-8-3 (SuperSO8 5x6 mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Gambaran Suhu Operasi | -55C to +150C (junction) | [DATA_NEEDED: Tj min/max] |
| Gate Drive Voltage (recommended) | 10 V (for rated RDS(on)) | — |
| Status RoHS | Compliant | Compliant |
| Part Number | — | BSC027N10NS5ATMA1 |
| Channel Type | — | N-Channel |
| Gate-Source Voltage (VGS) Max | — | [DATA_NEEDED: VGS max rating] |
| Continuous Drain Current (ID) at Ta | — | 23 A |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| Pulsed Drain Current (IDM) | — | 194 A |
| On-Resistance RDS(on) Max at VGS=10V | — | 2.7 mOhm |
| Power Dissipation (Ta) | — | 3 W |
| Power Dissipation (Tc) | — | 214 W |
| Aras MSL | — | [DATA_NEEDED: MSL rating] |
| Qualification | — | Industrial (AEC-Q101 variant BSC027N10NS5 exists separately) |