BSC100N10NSFGATMA1 vs BSC027N10NS5ATMA1 Comparison

Detailed side-by-side comparison of BSC100N10NSFGATMA1 by Infineon and BSC027N10NS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC100N10NSFGATMA1

BSC100N10NSFGATMA1 - 100V OptiMOS N-Channel MOSFET, 10mΞ© | Infineon

BSC100N10NSFGATMA1 βœ“ Active
Infineon
BSC027N10NS5ATMA1

BSC027N10NS5ATMA1 - 100V 194A OptiMOS 5 N-MOSFET | Infineon

BSC027N10NS5ATMA1 Nrnd

Specification Comparison

Parameter BSC100N10NSFGATMA1 BSC027N10NS5ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Nrnd
Stock Status In Stock In Stock
Unit Price (USD) $1.49 $1.10
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS β€”
FET Type N-Channel β€”
Technology MOSFET (Metal Oxide) OptiMOS 5 (100V)
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID), Ta 11.4 A β€”
Continuous Drain Current (ID), Tc 90 A β€”
Power Dissipation (PD), Tc 156 W β€”
Drain-Source On-Resistance (RDS(on)) max 10 mΞ© β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th) value] β€”
Package PG-TDSON-8-1 (SuperSO8 5x6) PG-TSON-8-3 (SuperSO8 5x6 mm)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55C to +150C (junction) [DATA_NEEDED: Tj min/max]
Gate Drive Voltage (recommended) 10 V (for rated RDS(on)) β€”
RoHS Status Compliant Compliant
Part Number β€” BSC027N10NS5ATMA1
Channel Type β€” N-Channel
Gate-Source Voltage (VGS) Max β€” [DATA_NEEDED: VGS max rating]
Continuous Drain Current (ID) at Ta β€” 23 A
Continuous Drain Current (ID) at Tc β€” 100 A
Pulsed Drain Current (IDM) β€” 194 A
On-Resistance RDS(on) Max at VGS=10V β€” 2.7 mOhm
Power Dissipation (Ta) β€” 3 W
Power Dissipation (Tc) β€” 214 W
MSL Level β€” [DATA_NEEDED: MSL rating]
Qualification β€” Industrial (AEC-Q101 variant BSC027N10NS5 exists separately)

Datasheets & Resources

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