BSC100N10NSFGATMA1 vs BSC027N10NS5ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSC100N10NSFGATMA1 sa pamamagitan ng Infineon at BSC027N10NS5ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro BSC100N10NSFGATMA1 BSC027N10NS5ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo NRND
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS —
FET Type N-Channel —
Technology MOSFET (Metal Oxide) OptiMOS 5 (100V)
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID), Ta 11.4 A —
Continuous Drain Current (ID), Tc 90 A —
Power Dissipation (PD), Tc 156 W —
Drain-Source On-Resistance (RDS(on)) max 10 mΩ —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th) value] —
Packhaging PG-TDSON-8-1 (SuperSO8 5x6) PG-TSON-8-3 (SuperSO8 5x6 mm)
Uri ng Pagpapasok Surface Mount Surface Mount
Hanay ng Temperature na Operasyon -55C to +150C (junction) [DATA_NEEDED: Tj min/max]
Gate Drive Voltage (recommended) 10 V (for rated RDS(on)) —
Tindminan RoHS Compliant Compliant
Part Number — BSC027N10NS5ATMA1
Channel Type — N-Channel
Gate-Source Voltage (VGS) Max — [DATA_NEEDED: VGS max rating]
Continuous Drain Current (ID) at Ta — 23 A
Continuous Drain Current (ID) at Tc — 100 A
Pulsed Drain Current (IDM) — 194 A
On-Resistance RDS(on) Max at VGS=10V — 2.7 mOhm
Power Dissipation (Ta) — 3 W
Power Dissipation (Tc) — 214 W
Level ng MSL — [DATA_NEEDED: MSL rating]
Qualification — Industrial (AEC-Q101 variant BSC027N10NS5 exists separately)

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