BSC100N10NSFGATMA1 vs BSC123N08NS3GATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC100N10NSFGATMA1 disebabkan oleh Infineon dan BSC123N08NS3GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC100N10NSFGATMA1 BSC123N08NS3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS —
FET Type N-Channel —
Technology MOSFET (Metal Oxide) —
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID), Ta 11.4 A —
Continuous Drain Current (ID), Tc 90 A —
Power Dissipation (PD), Tc 156 W —
Drain-Source On-Resistance (RDS(on)) max 10 mΩ —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th) value] [DATA_NEEDED: VGS(th) value]
Kemasan PG-TDSON-8-1 (SuperSO8 5x6) PG-TDSON-8-1 (SuperSO8 5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55C to +150C (junction) —
Gate Drive Voltage (recommended) 10 V (for rated RDS(on)) —
Status RoHS Compliant Compliant with exemption
Part Family — OptiMOS 3
Channel Type — N-Channel
Configuration — Single with built-in body diode
Maximum Drain-Source Voltage (VDS) — 80 V
Maximum Continuous Drain Current (ID, Tc) — 55 A
Maximum Continuous Drain Current (ID, Ta) — 11 A
Maximum Pulsed Drain Current — [DATA_NEEDED: pulsed drain current]
Maximum RDS(on) @ VGS=10 V — 12.3 mOhm
Maximum Gate-Source Voltage (VGS) — ±20 V
Total Gate Charge (Qg) — [DATA_NEEDED: Qg]
Power Dissipation (Tc) — 66 W
Power Dissipation (Ta) — 2.5 W
Suhu Hubungan Operasi — -55C to +150C
Aras MSL — 1 (per JEDEC J-STD-020)
Automotive Qualified — Yes (AEC-Q101)

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