BSC100N10NSFGATMA1 vs BSC123N08NS3GATMA1 Comparison
Detailed side-by-side comparison of BSC100N10NSFGATMA1 by Infineon and BSC123N08NS3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC100N10NSFGATMA1
BSC100N10NSFGATMA1 - 100V OptiMOS N-Channel MOSFET, 10mΞ© | Infineon
BSC100N10NSFGATMA1 β ActiveInfineon
BSC123N08NS3GATMA1
BSC123N08NS3GATMA1 - 80V 55A N-Ch OptiMOS 3 MOSFET | Infineon
BSC123N08NS3GATMA1 β ActiveSpecification Comparison
| Parameter | BSC100N10NSFGATMA1 | BSC123N08NS3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.49 | $0.71 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS | β |
| FET Type | N-Channel | β |
| Technology | MOSFET (Metal Oxide) | β |
| Drain-Source Voltage (VDS) | 100 V | β |
| Continuous Drain Current (ID), Ta | 11.4 A | β |
| Continuous Drain Current (ID), Tc | 90 A | β |
| Power Dissipation (PD), Tc | 156 W | β |
| Drain-Source On-Resistance (RDS(on)) max | 10 mΞ© | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th) value] | [DATA_NEEDED: VGS(th) value] |
| Package | PG-TDSON-8-1 (SuperSO8 5x6) | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +150C (junction) | β |
| Gate Drive Voltage (recommended) | 10 V (for rated RDS(on)) | β |
| RoHS Status | Compliant | Compliant with exemption |
| Part Family | β | OptiMOS 3 |
| Channel Type | β | N-Channel |
| Configuration | β | Single with built-in body diode |
| Maximum Drain-Source Voltage (VDS) | β | 80 V |
| Maximum Continuous Drain Current (ID, Tc) | β | 55 A |
| Maximum Continuous Drain Current (ID, Ta) | β | 11 A |
| Maximum Pulsed Drain Current | β | [DATA_NEEDED: pulsed drain current] |
| Maximum RDS(on) @ VGS=10 V | β | 12.3 mOhm |
| Maximum Gate-Source Voltage (VGS) | β | Β±20 V |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg] |
| Power Dissipation (Tc) | β | 66 W |
| Power Dissipation (Ta) | β | 2.5 W |
| Operating Junction Temperature | β | -55C to +150C |
| MSL Level | β | 1 (per JEDEC J-STD-020) |
| Automotive Qualified | β | Yes (AEC-Q101) |