BSC100N10NSFGATMA1 vs BSC123N08NS3GATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSC100N10NSFGATMA1 sa pamamagitan ng Infineon at BSC123N08NS3GATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSC100N10NSFGATMA1 - 100V OptiMOS N-Channel MOSFET, 10mΩ | Infineon
BSC100N10NSFGATMA1 ✓ NakahandaInfineon
BSC123N08NS3GATMA1 - 80V 55A N-Ch OptiMOS 3 MOSFET | Infineon
BSC123N08NS3GATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | BSC100N10NSFGATMA1 | BSC123N08NS3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS | — |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID), Ta | 11.4 A | — |
| Continuous Drain Current (ID), Tc | 90 A | — |
| Power Dissipation (PD), Tc | 156 W | — |
| Drain-Source On-Resistance (RDS(on)) max | 10 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th) value] | [DATA_NEEDED: VGS(th) value] |
| Packhaging | PG-TDSON-8-1 (SuperSO8 5x6) | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Hanay ng Temperature na Operasyon | -55C to +150C (junction) | — |
| Gate Drive Voltage (recommended) | 10 V (for rated RDS(on)) | — |
| Tindminan RoHS | Compliant | Compliant with exemption |
| Part Family | — | OptiMOS 3 |
| Channel Type | — | N-Channel |
| Configuration | — | Single with built-in body diode |
| Maximum Drain-Source Voltage (VDS) | — | 80 V |
| Maximum Continuous Drain Current (ID, Tc) | — | 55 A |
| Maximum Continuous Drain Current (ID, Ta) | — | 11 A |
| Maximum Pulsed Drain Current | — | [DATA_NEEDED: pulsed drain current] |
| Maximum RDS(on) @ VGS=10 V | — | 12.3 mOhm |
| Maximum Gate-Source Voltage (VGS) | — | ±20 V |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg] |
| Power Dissipation (Tc) | — | 66 W |
| Power Dissipation (Ta) | — | 2.5 W |
| Temperature ng Junction na Operasyon | — | -55C to +150C |
| Level ng MSL | — | 1 (per JEDEC J-STD-020) |
| Automotive Qualified | — | Yes (AEC-Q101) |