BSC117N08NS5ATMA1 vs IAUC100N10S5N040ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC117N08NS5ATMA1 disebabkan oleh Infineon dan IAUC100N10S5N040ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
BSC117N08NS5ATMA1 BSC117N08NS5ATMA1 - 80V 49A OptiMOS 5 N-FET | Infineon

BSC117N08NS5ATMA1 - 80V 49A OptiMOS 5 N-FET | Infineon

BSC117N08NS5ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr BSC117N08NS5ATMA1 IAUC100N10S5N040ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number BSC117N08NS5ATMA1 —
Technology OptiMOS 5 OptiMOS-5
Jenis Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) max 80 V —
Continuous Drain Current (ID) max 49 A (Tc) —
On-State Resistance (RDS(on)) max 11.7 mOhm —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 50 W —
Kemasan PG-TDSON-8-7 (SuperSO8 5x6) PG-TDSON-8-34 (TDSON-8, 5x6 mm) Surface Mount
Jenis Pemasangan Surface Mount Surface Mount
Kiraan Pin 8 —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) value] [DATA_NEEDED: VGS(th) typical value]
Total Gate Charge (Qg) [DATA_NEEDED: Qg value] [DATA_NEEDED: Qg value]
Gambaran Suhu Operasi -55 C to +150 C (typical MOSFET junction) -55C to +175C (junction)
Status RoHS Compliant Compliant
Lead-Free Yes —
Aras MSL 1 MSL1 (up to 260C peak reflow)
FET Type — N-Channel, Enhancement Mode
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) @ TC=25C — 100 A (package-limited)
Pulsed Drain Current (IDM) — 400 A
RDS(on) max @ VGS=10V — 4 mΩ
Maximum Power Dissipation (PD) — 167 W @ TC=25C
Thermal Resistance, Junction-to-Case (RthJC) — 0.9 K/W
Automotive Qualification — AEC-Q100 qualified
Avalanche Rating — 100% Avalanche tested
AOI Compatibility — Feasible for Automatic Optical Inspection

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