BSC155N06NDATMA1 vs BSC0993NDATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC155N06NDATMA1 disebabkan oleh Infineon dan BSC0993NDATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | BSC155N06NDATMA1 | BSC0993NDATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC155N06NDATMA1 | — |
| Technology | OptiMOS 3 (N-channel trench) | OptiMOS 5 trench MOSFET |
| Configuration | Dual N-channel MOSFET array | Dual N-Channel (Array) |
| Drain-to-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at Tc=25C | 20 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-State Resistance RDS(on) max at VGS=10V | 15.5 mOhm | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Gambaran Suhu Operasi | -55 C to +175 C | -55C to +150C (junction) |
| Kemasan | PG-TDSON-8-4 (SuperSO8 5x6 mm) | PG-TISON-8 |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Power Dissipation (Tc=25C) | 50 W | — |
| Aras MSL | 1 | [DATA_NEEDED: MSL level] |
| Status RoHS | Compliant (Pb-free plating) | Compliant |
| Lead-Free Plating | Yes | — |
| Shoot-Through Immunity Qgd/Qgs | < 0.8 | — |
| Product Series | — | OptiMOS 5 30V |
| Drain-Source Voltage (Vds) | — | 30 V |
| Continuous Drain Current (Id) @ Ta | — | 17 A |
| Channel Mode | — | Enhancement |
| ESD Protection | — | Yes (integrated) |
| Lead-Free | — | Yes |
| Rds(on) max @ Vgs=10V | — | [DATA_NEEDED: Rds(on) value] |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th) value] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg value] |