BSC360N15NS3GATMA1 vs BSC520N15NS3G Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC360N15NS3GATMA1 disebabkan oleh Infineon dan BSC520N15NS3G disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC360N15NS3GATMA1 BSC520N15NS3G
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC360N15NS3GATMA1 BSC520N15NS3 G
Technology OptiMOS 3 (N-Channel Trench MOSFET) OptiMOS 3 (trench-gate N-channel)
Drain-Source Voltage (VDS) 150 V —
Continuous Drain Current (ID) at Tc 33 A —
On-Resistance RDS(on) max at VGS=10V 36 mOhm —
Power Dissipation (PD) at Tc 74 W —
Gate Threshold Voltage (VGS th) typ 3.0 V —
Total Gate Charge (Qg) typ [DATA_NEEDED: Qg value] —
Kemasan PG-TDSON-8-1 (SuperSO8, 5x6 mm) PG-TDSON-8-5 (SuperSO8 5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55°C to +150°C (junction) —
Avalanche Energy Rated Yes —
Status RoHS Compliant —
Lead-Free Yes —
Aras MSL 1 —
Drain-Source Voltage (VDS) max — 150 V
Continuous Drain Current (ID) max at TC=25C — 21 A
On-Resistance RDS(on) max — 52 mΩ at VGS=10 V
Power Dissipation (Ptot) at TC=25C — 57 W
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
Suhu Hubungan Operasi — -55C to +150C
Kiraan Pin — 8
Lead Plating — Pb-free
RoHS Compliance — Compliant
JEDEC Qualification — Qualified per JEDEC
Channel Type — N-Channel (normal level)
Typical Application — DC-DC conversion, synchronous rectification

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