BSC520N15NS3G vs BSC190N15NS3GATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC520N15NS3G disebabkan oleh Infineon dan BSC190N15NS3GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC520N15NS3G BSC190N15NS3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number BSC520N15NS3 G —
Technology OptiMOS 3 (trench-gate N-channel) OptiMOS 3 (N-Channel)
Drain-Source Voltage (VDS) max 150 V —
Continuous Drain Current (ID) max at TC=25C 21 A —
On-Resistance RDS(on) max 52 mΩ at VGS=10 V —
Power Dissipation (Ptot) at TC=25C 57 W —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] 20 V
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] 2.5 V to 3.5 V
Suhu Hubungan Operasi -55C to +150C —
Kemasan PG-TDSON-8-5 (SuperSO8 5x6 mm) PG-TDSON-8-1 (TDSON-8 EP)
Jenis Pemasangan Surface Mount Surface Mount
Kiraan Pin 8 —
Lead Plating Pb-free —
RoHS Compliance Compliant —
JEDEC Qualification Qualified per JEDEC —
Channel Type N-Channel (normal level) —
Typical Application DC-DC conversion, synchronous rectification —
Drain-Source Voltage (VDS) — 150 V
Continuous Drain Current (ID) at Tc=25C — 50 A
Continuous Drain Current (ID) at Tc=100C — [DATA_NEEDED: ID at Tc=100C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max at VGS=10V — 19 mOhm
On-Resistance RDS(on) typ at VGS=10V — [DATA_NEEDED: RDS(on) typical at 10V]
Total Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
Power Dissipation (PD) at Tc=25C — 125 W
Gambaran Suhu Operasi — -55 C to +150 C
Status RoHS — Compliant
Aras MSL — 1

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