BSD214SNH6327XTSA1 vs BSS127H6327XTSA2 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSD214SNH6327XTSA1 disebabkan oleh Infineon dan BSS127H6327XTSA2 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSD214SNH6327XTSA1 BSS127H6327XTSA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel N-Channel SIPMOS, enhancement mode
Technology MOSFET (Metal Oxide), OptiMOS —
Drain-to-Source Voltage (Vdss) 20 V —
Continuous Drain Current (Id) at 25C 1.5 A —
Power Dissipation (Pd) at Ta 500 mW —
Gate Drive Voltage (Rds On rated) 2.5 V, 4.5 V —
Rds On (Max) @ Vgs=4.5V [DATA_NEEDED: Rds On at Vgs=4.5V] —
Rds On (Max) @ Vgs=2.5V [DATA_NEEDED: Rds On at Vgs=2.5V] —
Vgs(th) (typical) [DATA_NEEDED: Vgs threshold typical] —
Kemasan SOT-363 (PG-SOT363-PO), 6-pin SOT-23-3 (PG-SOT23)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55C to +150C (junction) —
Automotive Qualification AEC-Q101 qualified AEC-Q101
Lead Plating Pb-free —
Status RoHS Compliant Compliant (lead-free)
Aras MSL 1 [DATA_NEEDED: MSL rating]
Standard Pack Quantity 3000 (Tape & Reel) —
Drain-Source Voltage (VDS) — 600 V
Continuous Drain Current (ID) — 21 mA (Ta)
Pulsed Drain Current (ID,pulse) — [DATA_NEEDED: pulsed ID limit]
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) — 4.5 V (logic level, rated)
On-State Resistance (RDS(on)) max — 500 ohm at ID = 21 mA
Total Power Dissipation (Ptot) — 500 mW (Ta)
Suhu Hubungan Operasi — -55 C to +150 C
Kiraan Pin — 3
dv/dt Rated — Yes
Boson Bebas — Yes, per IEC 61249-2-21

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