BSL215CH6327XTSA1 vs BSL316CH6327XTSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSL215CH6327XTSA1 disebabkan oleh Infineon dan BSL316CH6327XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSL215CH6327XTSA1 BSL316CH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS —
FET Type N-Channel and P-Channel Complementary Pair —
Drain-Source Voltage (V_DS) 20 V —
Continuous Drain Current (I_D) 1.5 A —
R_DS(on) Max @ V_GS=4.5V 250 mOhm —
Gate Threshold Voltage (V_GS(th)) [DATA_NEEDED: gate threshold voltage] —
Power Dissipation (P_D) 500 mW —
Kemasan / Case PG-TSOP6-6 (6-pin TSOP) —
Jenis Pemasangan Surface Mount Surface Mount
Suhu Operasi -55C to +150C -55C to +150C (junction)
Configuration Half-bridge (1 N + 1 P) Complementary pair (1 N-channel + 1 P-channel in one package)
Technology OptiMOS trench MOSFET OptiMOS low-voltage MOSFET
Aras MSL 1 (unlimited) [DATA_NEEDED: MSL level]
Status RoHS Compliant Compliant
Lead-Free Yes —
Part Family — OptiMOS small-signal complementary MOSFET
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (N-channel ID) — 1.4 A
Continuous Drain Current (P-channel ID) — 1.5 A
Total Power Dissipation (Ptot) — 500 mW
Kemasan — PG-TSOP6-6 (TSOP6, 6-pin)
Channel Type — N-channel + P-channel (dual)
Kiraan Pin — 6
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) min/typ/max]
On-State Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) at VGS=10V/4.5V]

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