BSP129H6327XTSA1 vs BSP92PH6327XTSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSP129H6327XTSA1 disebabkan oleh Infineon dan BSP92PH6327XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSP129H6327XTSA1 BSP92PH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel, Depletion Mode —
Drain-Source Voltage (VDS) 240 V -250 V
Continuous Drain Current (ID) at TA=25C 350 mA —
On-Resistance RDS(on) max 4.2 ohm (some sources 6 ohm) —
Power Dissipation (PD) at TA=25C 1.8 W —
Kemasan PG-SOT223-4 (SOT-223, 3+Tab) PG-SOT223-4 (SOT-223-4)
Jenis Pemasangan Surface Mount Surface Mount
Suhu Operasi -55 C to +150 C (junction) -55C to +150C (Tj)
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
Threshold Voltage VGS(off) [DATA_NEEDED: depletion threshold VGS(off)] —
dv/dt Ruggedness Yes (rated) —
Automotive Qualification AEC-Q101 qualified —
Status RoHS Compliant —
Lead-Free Yes —
Aras MSL [DATA_NEEDED: MSL rating] 1 (unlimited)
Process Technology SIPMOS (vertical DMOS) —
Drain Terminal Tab (pin 4) —
Manufacturer — Infineon Technologies
Product Family — OptiMOS P-Channel Small-Signal Power MOSFET
Jenis Transistor — P-Channel Enhancement Mode MOSFET
Continuous Drain Current (ID) — -260 mA (Ta)
Power Dissipation (PD) — 1.8 W (Ta)
Channel Polarity — P-Channel
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical and min/max]
On-State Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) at VGS=-10V]
Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
Lead-Free / RoHS — Yes / Compliant
Kiraan Pin — 4 (Gate, Drain, Drain, Source)

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga