BSP129H6327XTSA1 vs BSP92PH6327XTSA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSP129H6327XTSA1 sa pamamagitan ng Infineon at BSP92PH6327XTSA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro BSP129H6327XTSA1 BSP92PH6327XTSA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type N-Channel, Depletion Mode —
Drain-Source Voltage (VDS) 240 V -250 V
Continuous Drain Current (ID) at TA=25C 350 mA —
On-Resistance RDS(on) max 4.2 ohm (some sources 6 ohm) —
Power Dissipation (PD) at TA=25C 1.8 W —
Packhaging PG-SOT223-4 (SOT-223, 3+Tab) PG-SOT223-4 (SOT-223-4)
Uri ng Pagpapasok Surface Mount Surface Mount
Temperature na Operasyon -55 C to +150 C (junction) -55C to +150C (Tj)
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
Threshold Voltage VGS(off) [DATA_NEEDED: depletion threshold VGS(off)] —
dv/dt Ruggedness Yes (rated) —
Automotive Qualification AEC-Q101 qualified —
Tindminan RoHS Compliant —
Lead-Free Yes —
Level ng MSL [DATA_NEEDED: MSL rating] 1 (unlimited)
Process Technology SIPMOS (vertical DMOS) —
Drain Terminal Tab (pin 4) —
Manufacturer — Infineon Technologies
Product Family — OptiMOS P-Channel Small-Signal Power MOSFET
Uri ng Transistor — P-Channel Enhancement Mode MOSFET
Continuous Drain Current (ID) — -260 mA (Ta)
Power Dissipation (PD) — 1.8 W (Ta)
Channel Polarity — P-Channel
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical and min/max]
On-State Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) at VGS=-10V]
Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
Lead-Free / RoHS — Yes / Compliant
Bilang ng Pin — 4 (Gate, Drain, Drain, Source)

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