BSP129H6327XTSA1 vs BSP92PH6327XTSA1 比較

詳細並排比較 BSP129H6327XTSA1 由 Infineon 與 BSP92PH6327XTSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 BSP129H6327XTSA1 BSP92PH6327XTSA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type N-Channel, Depletion Mode —
Drain-Source Voltage (VDS) 240 V -250 V
Continuous Drain Current (ID) at TA=25C 350 mA —
On-Resistance RDS(on) max 4.2 ohm (some sources 6 ohm) —
Power Dissipation (PD) at TA=25C 1.8 W —
封裝 PG-SOT223-4 (SOT-223, 3+Tab) PG-SOT223-4 (SOT-223-4)
安裝類型 Surface Mount Surface Mount
工作溫度 -55 C to +150 C (junction) -55C to +150C (Tj)
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
Threshold Voltage VGS(off) [DATA_NEEDED: depletion threshold VGS(off)] —
dv/dt Ruggedness Yes (rated) —
Automotive Qualification AEC-Q101 qualified —
RoHS 狀態 Compliant —
Lead-Free Yes —
MSL 等級 [DATA_NEEDED: MSL rating] 1 (unlimited)
Process Technology SIPMOS (vertical DMOS) —
Drain Terminal Tab (pin 4) —
Manufacturer — Infineon Technologies
Product Family — OptiMOS P-Channel Small-Signal Power MOSFET
電晶體類型 — P-Channel Enhancement Mode MOSFET
Continuous Drain Current (ID) — -260 mA (Ta)
Power Dissipation (PD) — 1.8 W (Ta)
Channel Polarity — P-Channel
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical and min/max]
On-State Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) at VGS=-10V]
Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
Lead-Free / RoHS — Yes / Compliant
腳位數 — 4 (Gate, Drain, Drain, Source)

資料表與資源

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