BSP88H6327XTSA1 vs BSD235CH6327XTSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSP88H6327XTSA1 disebabkan oleh Infineon dan BSD235CH6327XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSP88H6327XTSA1 BSD235CH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Jenis Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 240 V —
Continuous Drain Current (ID) 350 mA at Ta=25 C —
Power Dissipation (PD) 1.8 W at Ta=25 C —
Kemasan PG-SOT223-4 (SOT-223-3) —
Jenis Pemasangan Surface Mount Surface Mount
On-State Resistance (RDS(on)) 6 ohm typical at VGS=10 V —
Configuration Single N+P complementary dual MOSFET
Suhu Operasi -55 C to +150 C —
Technology SIPMOS (planar enhancement mode) OptiMOS™ low-voltage
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) min/typ/max] —
Automotive Qualification AEC-Q101 qualified —
Lead Plating Pb-free —
RoHS Compliance Compliant —
Aras MSL [DATA_NEEDED: MSL level] 1
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
Drain Tab Connection SOT-223 tab is drain —
Manufacturer — Infineon Technologies
Part Family — OptiMOS™
Drain-to-Source Voltage (VDS) — 20 V
N-Channel Continuous Drain Current (ID) — 950 mA
P-Channel Continuous Drain Current (ID) — 530 mA (negative polarity)
Total Power Dissipation (Ptot) — 500 mW
Package Type — PG-SOT363-6-1 (SOT-363, 6-pin)
Gambaran Suhu Operasi — -55 °C to +150 °C (junction)
Polarity — N-channel + P-channel
Channel Mode — Enhancement
Status RoHS — Compliant (lead-free)
Kiraan Pin — 6

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