BSP88H6327XTSA1 vs BSP316PH6327XTSA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSP88H6327XTSA1 disebabkan oleh Infineon dan BSP316PH6327XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | BSP88H6327XTSA1 | BSP316PH6327XTSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 240 V | — |
| Continuous Drain Current (ID) | 350 mA at Ta=25 C | — |
| Power Dissipation (PD) | 1.8 W at Ta=25 C | — |
| Kemasan | PG-SOT223-4 (SOT-223-3) | PG-SOT223-4 (TO-261-4) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| On-State Resistance (RDS(on)) | 6 ohm typical at VGS=10 V | — |
| Configuration | Single | — |
| Suhu Operasi | -55 C to +150 C | — |
| Technology | SIPMOS (planar enhancement mode) | SIPMOS (P-channel MOSFET) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) min/typ/max] | [DATA_NEEDED: VGS(th) typical] |
| Automotive Qualification | AEC-Q101 qualified | — |
| Lead Plating | Pb-free | — |
| RoHS Compliance | Compliant | — |
| Aras MSL | [DATA_NEEDED: MSL level] | 1 |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Drain Tab Connection | SOT-223 tab is drain | — |
| FET Type | — | P-Channel |
| Drain-to-Source Voltage (VDS) | — | -100 V |
| Continuous Drain Current (ID) at TA=25C | — | -680 mA |
| Total Power Dissipation (Ptot) at TA=25C | — | 1.8 W |
| On-Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) at VGS=-10V] |
| Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Gambaran Suhu Operasi | — | -55 C to +150 C (junction) |
| Bilangan Pin | — | 3 + thermal tab |
| Channel Mode | — | Enhancement |
| Status RoHS | — | Compliant |
| Packaging | — | Tape & Reel (H6327 suffix) |