BSP92PH6327XTSA1 vs BSP88H6327XTSA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSP92PH6327XTSA1 disebabkan oleh Infineon dan BSP88H6327XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | BSP92PH6327XTSA1 | BSP88H6327XTSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS P-Channel Small-Signal Power MOSFET | — |
| Jenis Transistor | P-Channel Enhancement Mode MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | -250 V | 240 V |
| Continuous Drain Current (ID) | -260 mA (Ta) | 350 mA at Ta=25 C |
| Power Dissipation (PD) | 1.8 W (Ta) | 1.8 W at Ta=25 C |
| Kemasan | PG-SOT223-4 (SOT-223-4) | PG-SOT223-4 (SOT-223-3) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Channel Polarity | P-Channel | — |
| Suhu Operasi | -55C to +150C (Tj) | -55 C to +150 C |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical and min/max] | [DATA_NEEDED: VGS(th) min/typ/max] |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=-10V] | 6 ohm typical at VGS=10 V |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Lead-Free / RoHS | Yes / Compliant | — |
| Aras MSL | 1 (unlimited) | [DATA_NEEDED: MSL level] |
| Kiraan Pin | 4 (Gate, Drain, Drain, Source) | — |
| Configuration | — | Single |
| Technology | — | SIPMOS (planar enhancement mode) |
| Automotive Qualification | — | AEC-Q101 qualified |
| Lead Plating | — | Pb-free |
| RoHS Compliance | — | Compliant |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Drain Tab Connection | — | SOT-223 tab is drain |