BSS214NH6327XTSA1 vs BSS308PEH6327XTSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSS214NH6327XTSA1 disebabkan oleh Infineon dan BSS308PEH6327XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
BSS214NH6327XTSA1 BSS214NH6327XTSA1 - 20V 1.5A N-Ch MOSFET SOT-23 | Infineon

BSS214NH6327XTSA1 - 20V 1.5A N-Ch MOSFET SOT-23 | Infineon

BSS214NH6327XTSA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr BSS214NH6327XTSA1 BSS308PEH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Drain-Source Voltage (VDS) 20 V -30 V
Continuous Drain Current (ID) 1.5 A (Ta) -2 A (Ta)
Power Dissipation (PD) 500 mW (Ta) 500 mW (Ta)
Drain-Source On-Resistance (RDS(on) max) 250 mOhm at VGS = 4.5 V —
Gate-Source Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical and min/max values] —
Gate-Source Voltage (VGS max) ±12 V (recommended) —
Technology OptiMOS 2 (planar N-channel) —
Kemasan SOT-23 (PG-SOT23), 3 pins —
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55C to +150C (junction) -55 °C to +150 °C
Qualification AEC-Q101 (Automotive) AEC-Q101 Automotive
Lead Finish Pb-free lead plating (matte tin) —
Status RoHS Compliant Compliant
Aras MSL 1 (per JEDEC J-STD-020) —
ESD Protection Yes (gate ESD diode) —
Manufacturer — Infineon Technologies
Part Family — OptiMOS P (small signal / small power MOSFET)
Jenis Transistor — P-Channel Enhancement Mode MOSFET
RDS(on) Max — 80 mΩ at VGS = -10 V
Gate-Source Voltage (VGS) Max — +/-20 V
Kemasan / Case — PG-SOT23 (SOT-23-3)
Bilangan Pin — 3
Packaging — Tape & Reel (T/R)
Standard Reel Quantity — 3000 pcs
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: gate threshold voltage]

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