BSS214NH6327XTSA1 vs BSS314PEH6327XTSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSS214NH6327XTSA1 disebabkan oleh Infineon dan BSS314PEH6327XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
BSS214NH6327XTSA1 BSS214NH6327XTSA1 - 20V 1.5A N-Ch MOSFET SOT-23 | Infineon

BSS214NH6327XTSA1 - 20V 1.5A N-Ch MOSFET SOT-23 | Infineon

BSS214NH6327XTSA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr BSS214NH6327XTSA1 BSS314PEH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel P-Channel
Drain-Source Voltage (VDS) 20 V —
Continuous Drain Current (ID) 1.5 A (Ta) —
Power Dissipation (PD) 500 mW (Ta) —
Drain-Source On-Resistance (RDS(on) max) 250 mOhm at VGS = 4.5 V —
Gate-Source Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical and min/max values] —
Gate-Source Voltage (VGS max) ±12 V (recommended) —
Technology OptiMOS 2 (planar N-channel) MOSFET (Metal Oxide)
Kemasan SOT-23 (PG-SOT23), 3 pins PG-SOT23-3 (SOT-23-3)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55C to +150C (junction) -55 C to +150 C (TJ)
Qualification AEC-Q101 (Automotive) AEC-Q101 (Automotive)
Lead Finish Pb-free lead plating (matte tin) —
Status RoHS Compliant Compliant
Aras MSL 1 (per JEDEC J-STD-020) MSL1 (per JEDEC J-STD-020)
ESD Protection Yes (gate ESD diode) —
Drain-to-Source Voltage (VDS) — -30 V
Continuous Drain Current (ID) @ TA=25C — -1.5 A
Power Dissipation (PD) @ TA=25C — 500 mW
RDS(on) max @ VGS=-10V — 140 mOhm
RDS(on) max @ VGS=-4.5V — [DATA_NEEDED: RDS(on) at -4.5V VGS]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical value]
Gate Drive Voltage (max Rds(on)) — -4.5 V, -10 V
Pin Configuration — G-D-S (Gate, Drain, Source)

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