BSS214NH6327XTSA1 vs BSS314PEH6327XTSA1 比較

詳細並排比較 BSS214NH6327XTSA1 由 Infineon 與 BSS314PEH6327XTSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
BSS214NH6327XTSA1 BSS214NH6327XTSA1 - 20V 1.5A N-Ch MOSFET SOT-23 | Infineon

BSS214NH6327XTSA1 - 20V 1.5A N-Ch MOSFET SOT-23 | Infineon

BSS214NH6327XTSA1 ✓ 啟用中
Infineon
BSS314PEH6327XTSA1 BSS314PEH6327XTSA1 - -30V P-Ch 1.5A OptiMOS MOSFET | Infineon

BSS314PEH6327XTSA1 - -30V P-Ch 1.5A OptiMOS MOSFET | Infineon

BSS314PEH6327XTSA1 ✓ 啟用中

規格比較

參數 BSS214NH6327XTSA1 BSS314PEH6327XTSA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type N-Channel P-Channel
Drain-Source Voltage (VDS) 20 V —
Continuous Drain Current (ID) 1.5 A (Ta) —
Power Dissipation (PD) 500 mW (Ta) —
Drain-Source On-Resistance (RDS(on) max) 250 mOhm at VGS = 4.5 V —
Gate-Source Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical and min/max values] —
Gate-Source Voltage (VGS max) ±12 V (recommended) —
Technology OptiMOS 2 (planar N-channel) MOSFET (Metal Oxide)
封裝 SOT-23 (PG-SOT23), 3 pins PG-SOT23-3 (SOT-23-3)
安裝類型 Surface Mount Surface Mount
工作溫度範圍 -55C to +150C (junction) -55 C to +150 C (TJ)
Qualification AEC-Q101 (Automotive) AEC-Q101 (Automotive)
Lead Finish Pb-free lead plating (matte tin) —
RoHS 狀態 Compliant Compliant
MSL 等級 1 (per JEDEC J-STD-020) MSL1 (per JEDEC J-STD-020)
ESD Protection Yes (gate ESD diode) —
Drain-to-Source Voltage (VDS) — -30 V
Continuous Drain Current (ID) @ TA=25C — -1.5 A
Power Dissipation (PD) @ TA=25C — 500 mW
RDS(on) max @ VGS=-10V — 140 mOhm
RDS(on) max @ VGS=-4.5V — [DATA_NEEDED: RDS(on) at -4.5V VGS]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical value]
Gate Drive Voltage (max Rds(on)) — -4.5 V, -10 V
Pin Configuration — G-D-S (Gate, Drain, Source)

資料表與資源

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