BSS316NH6327XTSA1 vs BSS308PEH6327XTSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSS316NH6327XTSA1 disebabkan oleh Infineon dan BSS308PEH6327XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSS316NH6327XTSA1 BSS308PEH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel, Enhancement Mode —
Technology OptiMOS 2 (Trench) —
Drain-Source Voltage (VDS) 30 V -30 V
Continuous Drain Current (ID) at TA=25C 1.4 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Drain-Source On-Resistance RDS(on) max 160 mOhm at VGS=10V, ID=1.4A —
Gate-Source Threshold Voltage VGS(th) typ 2 V at ID=3.7 uA —
Total Gate Charge (Qg) 600 pC at VGS=5 V —
Input Capacitance (Ciss) 94 pF at VDS=15 V —
Output Capacitance (Coss) [DATA_NEEDED: output capacitance] —
Reverse Transfer Capacitance (Crss) [DATA_NEEDED: reverse transfer capacitance] —
Maximum Power Dissipation (PD) at TA=25C 500 mW —
Gambaran Suhu Hubungan Operasi -55 C to +150 C —
Kemasan PG-SOT23 (SOT-23-3) —
Jenis Pemasangan Surface Mount Surface Mount
Lead Plating Pb-free (Matte Tin) —
Aras MSL MSL1 (per JEDEC J-STD-020) —
Status RoHS Compliant Compliant
Automotive Qualification AEC-Q101 qualified —
Manufacturer — Infineon Technologies
Part Family — OptiMOS P (small signal / small power MOSFET)
Jenis Transistor — P-Channel Enhancement Mode MOSFET
Continuous Drain Current (ID) — -2 A (Ta)
RDS(on) Max — 80 mΩ at VGS = -10 V
Gate-Source Voltage (VGS) Max — +/-20 V
Power Dissipation (PD) — 500 mW (Ta)
Gambaran Suhu Operasi — -55 °C to +150 °C
Kemasan / Case — PG-SOT23 (SOT-23-3)
Bilangan Pin — 3
Qualification — AEC-Q101 Automotive
Packaging — Tape & Reel (T/R)
Standard Reel Quantity — 3000 pcs
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: gate threshold voltage]

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