BSZ017NE2LS5IATMA1 vs BSZ036NE2LSATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSZ017NE2LS5IATMA1 disebabkan oleh Infineon dan BSZ036NE2LSATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
BSZ017NE2LS5IATMA1 BSZ017NE2LS5IATMA1 - 25V OptiMOS 5 N-FET, 1.7mΩ TSDSON-8

BSZ017NE2LS5IATMA1 - 25V OptiMOS 5 N-FET, 1.7mΩ TSDSON-8

BSZ017NE2LS5IATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr BSZ017NE2LS5IATMA1 BSZ036NE2LSATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity N-Channel —
Drain-Source Voltage (VDS) 25 V 25 V
Continuous Drain Current (TA) 27 A —
Continuous Drain Current (TC) 40 A —
On-Resistance RDS(on) @ VGS=10V 1.7 mΩ —
On-Resistance Test Current 20 A —
Gate-Source Voltage (VGS) Rating ±16 V —
Gate Threshold Voltage VGS(th) 2 V @ 250 µA —
Total Gate Charge Qg 30 nC @ VGS=10V —
Input Capacitance Ciss 2000 pF @ VDS=12V —
Power Dissipation (TA) 2.1 W —
Power Dissipation (TC) 50 W —
Suhu Hubungan Operasi -55°C to +150°C —
Kemasan PG-TSDSON-8-FL (8-PowerTDFN) PG-TSDSON-8-FL (5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Series / Family OptiMOS 5 25V —
Status RoHS Compliant Compliant
Manufacturer — Infineon Technologies
Product Family — OptiMOS 25V
Polarity / Channel Type — N-Channel
Continuous Drain Current (ID) at TA=25C — 16 A
Continuous Drain Current (ID) at TC=25C — 40 A
Power Dissipation (PD) at TA=25C — 2.1 W
Power Dissipation (PD) at TC=25C — 37 W
Configuration — Single
Gambaran Suhu Operasi — -55C to +150C
Aras MSL — 1 (Unlimited)
Lead-Free — Yes
Gate Drive — Logic-level compatible

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