BSZ036NE2LSATMA1 vs BSO150N03MDGXUMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSZ036NE2LSATMA1 disebabkan oleh Infineon dan BSO150N03MDGXUMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
BSO150N03MDGXUMA1 - 30V Dual N-Channel MOSFET, 9.3A, OptiMOS 3M | Infineon
BSO150N03MDGXUMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | BSZ036NE2LSATMA1 | BSO150N03MDGXUMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 25V | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 25 V | — |
| Continuous Drain Current (ID) at TA=25C | 16 A | — |
| Continuous Drain Current (ID) at TC=25C | 40 A | — |
| Power Dissipation (PD) at TA=25C | 2.1 W | — |
| Power Dissipation (PD) at TC=25C | 37 W | — |
| Kemasan | PG-TSDSON-8-FL (5x6 mm) | PG-DSO-8 (SO-8 with exposed pad) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Configuration | Single | — |
| Gambaran Suhu Operasi | -55C to +150C | -55C to +150C |
| Aras MSL | 1 (Unlimited) | 1 (unlimited) |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Gate Drive | Logic-level compatible | — |
| Part Number | — | BSO150N03MDGXUMA1 |
| Product Type | — | Dual N-Channel MOSFET Array |
| Technology | — | OptiMOS 3M (30V trench MOSFET) |
| Drain-Source Voltage (VDS) max | — | 30 V |
| Continuous Drain Current (ID) max per channel | — | 9.3 A |
| On-State Resistance (RDS(on)) max | — | 15 mOhm at VGS=10V |
| Gate-Source Voltage (VGS) max | — | 20 V |
| Gate Threshold Voltage (VGS(th)) typ | — | 1.0 V |
| Power Dissipation (PD) max | — | 1.4 W |
| Channel Configuration | — | Dual N-Channel (independent) |