BSZ065N03LSATMA1 vs IQDH35N03LM5CGATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSZ065N03LSATMA1 disebabkan oleh Infineon dan IQDH35N03LM5CGATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IQDH35N03LM5CGATMA1 - 30V 700A 0.35mΩ N-Channel MOSFET | Infineon
IQDH35N03LM5CGATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | BSZ065N03LSATMA1 | IQDH35N03LM5CGATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 30V | — |
| Jenis Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at TA=25C | 12 A | — |
| Continuous Drain Current (ID) at TC=25C | 40 A | — |
| Power Dissipation (PD) at TA=25C | 2.1 W | — |
| Power Dissipation (PD) at TC=25C | 26 W | — |
| Kemasan / Case | PG-TSDSON-8-FL (S308) | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Configuration | Single N-Channel | — |
| Technology | Trench MOSFET (OptiMOS) | OptiMOS 5 trench MOSFET |
| Gambaran Suhu Operasi | -55C to +150C (junction) | -55 °C to +175 °C |
| Aras MSL | 1 | 1 |
| Status RoHS | Compliant | Compliant |
| Gate Drive (typical) | 4.5 V | — |
| Drain-to-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at Ta | — | 66 A |
| Pulsed Drain Current (IDM) at Tc | — | 700 A |
| Gate-to-Source Voltage (VGS) max | — | ±20 V |
| Static Drain-to-Source On-Resistance (RDS(on)) | — | 0.35 mΩ (typical at VGS=10 V) |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| Power Dissipation (PD) at Tc | — | 278 W |
| Kemasan | — | PG-TTFN-9-U02 (PQFN 5x6 mm²) |
| Boson Bebas | — | Yes |
| Channel Type | — | N-Channel |