DMC2400UV-7 vs FDD8424H Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci DMC2400UV-7 disebabkan oleh Diodes Incorporated dan FDD8424H disebabkan oleh onsemi. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Diodes Incorporated
DMC2400UV-7 - 20V Complementary N/P MOSFET Array | Diodes Inc
DMC2400UV-7 ✓ Aktif
Pengandingan Spesifikasi
| Parametr | DMC2400UV-7 | FDD8424H |
|---|---|---|
| Merek | Diodes Incorporated | onsemi |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N and P-Channel Complementary Pair | — |
| Drain-to-Source Voltage (Vdss) | 20 V | — |
| Continuous Drain Current (N-Ch) @ 25C | 1.03 A | — |
| Continuous Drain Current (P-Ch) @ 25C | 700 mA | — |
| RDS(on) Max @ VGS=4.5V, Id=200mA | 480 mOhm | — |
| Gate Threshold Voltage (Vgs(th)) | <1 V (low threshold) | — |
| Total Package Power Dissipation | 450 mW | — |
| Kapasitansi Masukan | Low (per datasheet) | — |
| Switching Speed | Fast | — |
| Input/Output Leakage | Low | — |
| Suhu Hubungan Operasi | -55C to +150C | -55 °C to +150 °C |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Kemasan | SOT-563 | — |
| Configuration | Complementary Pair (N + P) | N-Channel and P-Channel, independent dice |
| Status RoHS | Compliant | Compliant |
| Manufacturer | — | onsemi (formerly Fairchild Semiconductor) |
| Product Type | — | Dual N-Channel and P-Channel MOSFET |
| Process Technology | — | PowerTrench (advanced trench-gate) |
| Package Type | — | TO-252 (DPAK), surface mount |
| N-Channel VDS (Drain-Source Voltage) | — | 40 V |
| N-Channel Continuous Drain Current | — | 20 A |
| N-Channel RDS(on) max at VGS=10V | — | 24 mΩ |
| P-Channel VDS (Drain-Source Voltage) | — | -40 V |
| P-Channel Continuous Drain Current | — | -20 A |
| P-Channel RDS(on) max at VGS=-10V | — | 54 mΩ |
| Gate Charge N-Ch (Qg) typ at VGS=10V | — | 20 nC |
| Input Capacitance Ciss max | — | 1000 pF |
| Total Power Dissipation (Pd) | — | 1.3 W |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Boson Bebas | — | Compliant per GlobalSpec listing |
| ECCN | — | EAR99 |