DMC2400UV-7 vs FDD8424H 比較

詳細並排比較 DMC2400UV-7 由 Diodes Incorporated 與 FDD8424H 由 onsemi. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Diodes Incorporated
DMC2400UV-7 DMC2400UV-7 - 20V Complementary N/P MOSFET Array | Diodes Inc

DMC2400UV-7 - 20V Complementary N/P MOSFET Array | Diodes Inc

DMC2400UV-7 ✓ 啟用中

規格比較

參數 DMC2400UV-7 FDD8424H
品牌 Diodes Incorporated onsemi
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type N and P-Channel Complementary Pair —
Drain-to-Source Voltage (Vdss) 20 V —
Continuous Drain Current (N-Ch) @ 25C 1.03 A —
Continuous Drain Current (P-Ch) @ 25C 700 mA —
RDS(on) Max @ VGS=4.5V, Id=200mA 480 mOhm —
Gate Threshold Voltage (Vgs(th)) <1 V (low threshold) —
Total Package Power Dissipation 450 mW —
輸入電容 Low (per datasheet) —
Switching Speed Fast —
Input/Output Leakage Low —
工作接面溫度 -55C to +150C -55 °C to +150 °C
安裝類型 Surface Mount Surface Mount
封裝 SOT-563 —
Configuration Complementary Pair (N + P) N-Channel and P-Channel, independent dice
RoHS 狀態 Compliant Compliant
Manufacturer — onsemi (formerly Fairchild Semiconductor)
Product Type — Dual N-Channel and P-Channel MOSFET
Process Technology — PowerTrench (advanced trench-gate)
Package Type — TO-252 (DPAK), surface mount
N-Channel VDS (Drain-Source Voltage) — 40 V
N-Channel Continuous Drain Current — 20 A
N-Channel RDS(on) max at VGS=10V — 24 mΩ
P-Channel VDS (Drain-Source Voltage) — -40 V
P-Channel Continuous Drain Current — -20 A
P-Channel RDS(on) max at VGS=-10V — 54 mΩ
Gate Charge N-Ch (Qg) typ at VGS=10V — 20 nC
Input Capacitance Ciss max — 1000 pF
Total Power Dissipation (Pd) — 1.3 W
Gate-Source Voltage (VGS) max — ±20 V
無鹵素 — Compliant per GlobalSpec listing
ECCN — EAR99

資料表與資源

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