EP4CE30F19A7N vs EP4CE30F19C7N Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci EP4CE30F19A7N disebabkan oleh Intel dan EP4CE30F19C7N disebabkan oleh Intel. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | EP4CE30F19A7N | EP4CE30F19C7N |
|---|---|---|
| Merek | Intel | Intel |
| Kategori | FPGA & CPLD | FPGA & CPLD |
| Status Lingkungan Hidup | Aktif | Aktif |
| Series | Cyclone IV E | — |
| Logic Elements | 28,848 | 28,880 |
| Embedded Memory Bits | 608,256 (76 KB) | — |
| Number of Logic Array Blocks (LABs) | [DATA_NEEDED: LAB count] | — |
| User I/O Count | 193 | — |
| Bilangan Pin | 324 | — |
| Kemasan | FBGA-324 (F19) | FBGA-256 (F19) |
| Process Technology | 60 nm | — |
| Core Voltage | 1.0 V / 1.2 V | 1.0 V (typical) |
| Embedded 18x18 Multipliers | 66 | 66 |
| General-Purpose PLLs | 4 | 4 |
| Global Clock Networks | 20 | — |
| Suhu Operasi | Automotive / Industrial grade | — |
| Configuration Modes | JTAG, Active Serial, Passive Serial | JTAG, AS, PS, FPP |
| Status RoHS | Compliant | Compliant |
| Jenis Pemasangan | Surface Mount | — |
| Speed Grade | 7 | -7 (fastest commercial) |
| Family | — | Cyclone IV E |
| Embedded Memory | — | 594 Kbits (M9K blocks) |
| Maximum User I/O | — | 329 |
| Temperature Grade | — | Commercial (0C to +85C junction) |
| Process Node | — | 60 nm low-power |
| I/O Standards | — | LVDS, LVTTL, LVCMOS, SSTL, HSTL |
| External Memory Interface | — | DDR, DDR2, QDRII SRAM |
| Lead-Free | — | Yes |