EP4CE30F19A7N vs EP4CE30F19C7N Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EP4CE30F19A7N sa pamamagitan ng Intel at EP4CE30F19C7N sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | EP4CE30F19A7N | EP4CE30F19C7N |
|---|---|---|
| Brand | Intel | Intel |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Series | Cyclone IV E | — |
| Logic Elements | 28,848 | 28,880 |
| Embedded Memory Bits | 608,256 (76 KB) | — |
| Number of Logic Array Blocks (LABs) | [DATA_NEEDED: LAB count] | — |
| User I/O Count | 193 | — |
| Bilang ng Pins | 324 | — |
| Packhaging | FBGA-324 (F19) | FBGA-256 (F19) |
| Process Technology | 60 nm | — |
| Core Voltage | 1.0 V / 1.2 V | 1.0 V (typical) |
| Embedded 18x18 Multipliers | 66 | 66 |
| General-Purpose PLLs | 4 | 4 |
| Global Clock Networks | 20 | — |
| Temperature na Operasyon | Automotive / Industrial grade | — |
| Configuration Modes | JTAG, Active Serial, Passive Serial | JTAG, AS, PS, FPP |
| Tindminan RoHS | Compliant | Compliant |
| Uri ng Pagpapasok | Surface Mount | — |
| Speed Grade | 7 | -7 (fastest commercial) |
| Family | — | Cyclone IV E |
| Embedded Memory | — | 594 Kbits (M9K blocks) |
| Maximum User I/O | — | 329 |
| Temperature Grade | — | Commercial (0C to +85C junction) |
| Process Node | — | 60 nm low-power |
| I/O Standards | — | LVDS, LVTTL, LVCMOS, SSTL, HSTL |
| External Memory Interface | — | DDR, DDR2, QDRII SRAM |
| Lead-Free | — | Yes |