EPF10K250EBI600-3 vs EPF10K250EBC600-1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci EPF10K250EBI600-3 disebabkan oleh Intel dan EPF10K250EBC600-1 disebabkan oleh Intel. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Intel
EPF10K250EBI600-3 - 250K Gates FLEX 10KE FPGA, 600-BGA | Intel
EPF10K250EBI600-3 ⚠ Bahagian terakhir untuk beliPengandingan Spesifikasi
| Parametr | EPF10K250EBI600-3 | EPF10K250EBC600-1 |
|---|---|---|
| Merek | Intel | Intel |
| Kategori | FPGA & CPLD | FPGA & CPLD |
| Status Lingkungan Hidup | Masa Terakhir Dibeli | Obsolete |
| Family | FLEX 10KE | FLEX 10KE |
| Logic Elements | 12,160 | 12,160 |
| Typical Gate Count | 250,000 system gates | — |
| Embedded System Blocks (ESBs) | 12 | — |
| Maximum User I/O | 470 | — |
| Dedicated Inputs | 4 | — |
| PLLs | 4 | — |
| On-chip RAM | Up to 40 Kbits | — |
| Kemasan | 600-ball BGA (HBGA) | 600-BGA FineLine BGA |
| Ball Pitch | 1.93 mm | — |
| Core Voltage | 2.3 V (FLEX 10KE standard) [DATA_NEEDED: confirm exact VCCINT] | 5.0 V |
| Suhu Operasi | Industrial, 0C to +85C [DATA_NEEDED: confirm -40C to +85C range] | 0°C to +70°C (Commercial) |
| Speed Grade | -3 (fastest) | -1 |
| Process Technology | 0.22 µm CMOS, 4-layer metal | 0.22 µm SRAM |
| Configuration Method | SRAM, requires external configuration device (EPC series) | JTAG / ByteBlaster / EPC-series PROM |
| Jenis Pemasangan | Surface Mount | — |
| Status RoHS | Not specified (SnPb / tin-lead finish per legacy distributor listing) | [DATA_NEEDED: RoHS status] |
| Lead-free | no (legacy tin-lead per distributor description) | — |
| Manufacturer | — | Intel / Altera |
| Typical Gates | — | 250,000 |
| Usable Gates | — | 110,000 |
| Embedded Array Blocks (EABs) | — | 6 |
| Maximum RAM Bits | — | 40,960 |
| Number of PLLs | — | 6 |
| Programmable I/O Voltage | — | 3.3 V / 5.0 V (MultiVolt I/O) |