EPM570GF256C4N vs 5M2210ZF256C4N Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci EPM570GF256C4N disebabkan oleh Altera dan 5M2210ZF256C4N disebabkan oleh Altera. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Altera
EPM570GF256C4N - 570 LEs CPLD, 4ns, 212 I/O, FBGA-256 | Intel / Altera
EPM570GF256C4N ✓ AktifAltera
5M2210ZF256C4N - MAX V CPLD, 1700 LE, FBGA-256, C4 Speed | Intel / Altera
5M2210ZF256C4N ✓ AktifPengandingan Spesifikasi
| Parametr | EPM570GF256C4N | 5M2210ZF256C4N |
|---|---|---|
| Merek | Altera | Altera |
| Kategori | FPGA & CPLD | FPGA & CPLD |
| Status Lingkungan Hidup | Aktif | Aktif |
| Family | MAX II G | MAX V |
| Device Series | EPM570G | — |
| Logic Elements (LEs) | 570 | 1700 |
| Macrocells | 440 | — |
| User I/Os | 212 | — |
| User Flash Memory (UFM) | 8 Kbits | — |
| Speed Grade | C4 (tPD = 4 ns) | C4 (tPD ~4 ns class) |
| Pin-to-Pin Delay (tPD) | 4 ns | — |
| Internal fMAX | 304 MHz | — |
| Kemasan | 256-ball FineLine BGA (FBGA-256) | FBGA-256 (FineLine BGA) |
| Ball Pitch | 1.0 mm | — |
| Package Dimensions | 17 x 17 mm | — |
| Core Voltage | 1.8 V | — |
| I/O Bank Voltages (MultiVolt) | 1.5 V / 1.8 V / 2.5 V / 3.3 V | — |
| Suhu Operasi | -40 °C to +125 °C (industrial) | 0C to 85C (Commercial) |
| Configuration Memory | Flash (non-volatile, instant-on) | — |
| Programming Interface | JTAG (IEEE 1149.1), in-system programmable | JTAG (IEEE 1149.1) / IEEE 1532 ISP |
| Lead-Free / RoHS | Lead-free, FBGA package | — |
| Jenis Pemasangan | Surface Mount (BGA) | — |
| Device | — | 5M2210Z |
| Logic Array Blocks (LABs) | — | 221 |
| User Flash Memory | — | 8192 bits |
| Internal RAM | — | 212 Kbits |
| Maximum User I/O (family) | — | 203 |
| User I/O (this package) | — | 160 |
| Core Voltage (VCCINT) | — | 1.8 V |
| I/O Bank Voltage (VCCIO) | — | 1.5 V / 1.8 V / 2.5 V / 3.3 V |
| Number of I/O Banks | — | 4 |
| Configuration Method | — | Internal flash (instant-on < 1 ms) |
| Process Technology | — | 0.30 um 6-metal-layer CMOS |
| Status RoHS | — | Compliant (Pb-free ball finish) |