EPM570GF256C4N vs 5M2210ZF256C4N Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EPM570GF256C4N sa pamamagitan ng Altera at 5M2210ZF256C4N sa pamamagitan ng Altera. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Altera
EPM570GF256C4N - 570 LEs CPLD, 4ns, 212 I/O, FBGA-256 | Intel / Altera
EPM570GF256C4N ✓ NakahandaAltera
5M2210ZF256C4N - MAX V CPLD, 1700 LE, FBGA-256, C4 Speed | Intel / Altera
5M2210ZF256C4N ✓ NakahandaPagsanggunian na paghahambing
| Parametro | EPM570GF256C4N | 5M2210ZF256C4N |
|---|---|---|
| Brand | Altera | Altera |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Family | MAX II G | MAX V |
| Device Series | EPM570G | — |
| Logic Elements (LEs) | 570 | 1700 |
| Macrocells | 440 | — |
| User I/Os | 212 | — |
| User Flash Memory (UFM) | 8 Kbits | — |
| Speed Grade | C4 (tPD = 4 ns) | C4 (tPD ~4 ns class) |
| Pin-to-Pin Delay (tPD) | 4 ns | — |
| Internal fMAX | 304 MHz | — |
| Packhaging | 256-ball FineLine BGA (FBGA-256) | FBGA-256 (FineLine BGA) |
| Ball Pitch | 1.0 mm | — |
| Package Dimensions | 17 x 17 mm | — |
| Core Voltage | 1.8 V | — |
| I/O Bank Voltages (MultiVolt) | 1.5 V / 1.8 V / 2.5 V / 3.3 V | — |
| Temperature na Operasyon | -40 °C to +125 °C (industrial) | 0C to 85C (Commercial) |
| Configuration Memory | Flash (non-volatile, instant-on) | — |
| Programming Interface | JTAG (IEEE 1149.1), in-system programmable | JTAG (IEEE 1149.1) / IEEE 1532 ISP |
| Lead-Free / RoHS | Lead-free, FBGA package | — |
| Uri ng Pagpapasok | Surface Mount (BGA) | — |
| Device | — | 5M2210Z |
| Logic Array Blocks (LABs) | — | 221 |
| User Flash Memory | — | 8192 bits |
| Internal RAM | — | 212 Kbits |
| Maximum User I/O (family) | — | 203 |
| User I/O (this package) | — | 160 |
| Core Voltage (VCCINT) | — | 1.8 V |
| I/O Bank Voltage (VCCIO) | — | 1.5 V / 1.8 V / 2.5 V / 3.3 V |
| Number of I/O Banks | — | 4 |
| Configuration Method | — | Internal flash (instant-on < 1 ms) |
| Process Technology | — | 0.30 um 6-metal-layer CMOS |
| Tindminan RoHS | — | Compliant (Pb-free ball finish) |