FDV301N vs BSS138LT1G Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci FDV301N disebabkan oleh onsemi dan BSS138LT1G disebabkan oleh onsemi. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr FDV301N BSS138LT1G
Merek onsemi onsemi
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Jenis Transistor N-Channel Enhancement Mode MOSFET (Digital FET) N-Channel MOSFET
Drain-Source Voltage (Vdss) 25 V —
Continuous Drain Current (Id) 220 mA (Ta) —
Peak Drain Current 0.5 A —
RDS(on) at VGS = 2.7 V 5 ohm (typical) —
RDS(on) typical 4 ohm —
Power Dissipation (Pd) 350 mW (Ta) —
Technology High cell density DMOS —
Gate Drive Type Logic level (no bias resistors required) —
Jenis Pemasangan Surface Mount Surface Mount
Kemasan SOT-23-3 SOT-23-3 (TO-236)
Suhu Operasi [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
Gate-Source Voltage (Vgs) Max [DATA_NEEDED: maximum gate-source voltage] —
Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Input Capacitance (Ciss) [DATA_NEEDED: input capacitance] —
Thermal Resistance (RthJA) [DATA_NEEDED: thermal resistance junction to ambient] —
Status RoHS [DATA_NEEDED: RoHS compliance status] Compliant (RoHS Compliant and Pb-free per Easybom)
Aras MSL [DATA_NEEDED: moisture sensitivity level] —
Drain-Source Voltage (VDS) — 50 V
Continuous Drain Current (ID) — 200 mA (Ta)
Power Dissipation (PD) — 225 mW (Ta)
On-Resistance Max (RDS(on)) — 3.5 ohm
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: gate threshold voltage]
Gate-Source Voltage Max (VGS) — [DATA_NEEDED: maximum gate-source voltage]
Configuration — Single FET
Channel Mode — Enhancement Mode
Product Family — BSS138LT Series Small Signal MOSFET
Typical Applications — Computers, printers, cordless phones, DC-DC converters

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