FDV301N vs BSS138LT1G 比較
詳細並排比較 FDV301N 由 onsemi 與 BSS138LT1G 由 onsemi. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | FDV301N | BSS138LT1G |
|---|---|---|
| 品牌 | onsemi | onsemi |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 電晶體類型 | N-Channel Enhancement Mode MOSFET (Digital FET) | N-Channel MOSFET |
| Drain-Source Voltage (Vdss) | 25 V | — |
| Continuous Drain Current (Id) | 220 mA (Ta) | — |
| Peak Drain Current | 0.5 A | — |
| RDS(on) at VGS = 2.7 V | 5 ohm (typical) | — |
| RDS(on) typical | 4 ohm | — |
| Power Dissipation (Pd) | 350 mW (Ta) | — |
| Technology | High cell density DMOS | — |
| Gate Drive Type | Logic level (no bias resistors required) | — |
| 安裝類型 | Surface Mount | Surface Mount |
| 封裝 | SOT-23-3 | SOT-23-3 (TO-236) |
| 工作溫度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Gate-Source Voltage (Vgs) Max | [DATA_NEEDED: maximum gate-source voltage] | — |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: input capacitance] | — |
| Thermal Resistance (RthJA) | [DATA_NEEDED: thermal resistance junction to ambient] | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS compliance status] | Compliant (RoHS Compliant and Pb-free per Easybom) |
| MSL 等級 | [DATA_NEEDED: moisture sensitivity level] | — |
| Drain-Source Voltage (VDS) | — | 50 V |
| Continuous Drain Current (ID) | — | 200 mA (Ta) |
| Power Dissipation (PD) | — | 225 mW (Ta) |
| On-Resistance Max (RDS(on)) | — | 3.5 ohm |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Gate-Source Voltage Max (VGS) | — | [DATA_NEEDED: maximum gate-source voltage] |
| Configuration | — | Single FET |
| Channel Mode | — | Enhancement Mode |
| Product Family | — | BSS138LT Series Small Signal MOSFET |
| Typical Applications | — | Computers, printers, cordless phones, DC-DC converters |