H5AN4G6NBJR-RDC vs H5AN4G8NBJR-VKC Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5AN4G6NBJR-RDC disebabkan oleh SK hynix dan H5AN4G8NBJR-VKC disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | H5AN4G6NBJR-RDC | H5AN4G8NBJR-VKC |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gb | — |
| Organisasi | 256M x 16 | — |
| Tegangan Pemberi Arus | 1.2 V | — |
| Antaramuka | CMOS, fully synchronous | — |
| Package Code | TFBGA (FBGA-96) | — |
| Package Shape | Rectangular | — |
| Package Width | 7.5 mm | — |
| Number of Terminals | 96 | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Temperature Grade | OTHER (per Partstack listing); -I industrial option -40C to +95C per family datasheet | — |
| Self Refresh | Auto / Self Refresh | — |
| Data Mask Function | Yes | — |
| Asynchronous Reset | Yes | — |
| On-Die Termination | Dynamic ODT | — |
| ZQ Calibration | Yes | — |
| Write Leveling | Yes | — |
| CRC Function | Yes | — |
| Lead-Free / Halogen-Free | Yes (per datasheet cover: Lead-Free & Halogen-Free) | — |
| Speed Grade | -RDC (see manufacturer datasheet for validated data-rate bin) | — |
| Saiz Ingatan | — | 4 Gb |
| Memory Organization | — | 512M x8 |
| Kadar Data | — | 2666 Mbps (DDR4-2666) |
| Memory Interface | — | Parallel |
| Supply Voltage (VDD) | — | 1.2 V |
| Kemasan | — | FBGA-78 (7.5 x 11 mm) |
| Technology | — | CMOS DRAM |
| Volatile / Non-Volatile | — | Volatile |
| Suhu Operasi | — | [DATA_NEEDED: operating temperature range] |
| Latensi CAS | — | [DATA_NEEDED: CAS latency for 2666 grade] |
| Refresh | — | [DATA_NEEDED: refresh rate] |
| Status RoHS | — | Compliant (Lead-Free & Halogen-Free per datasheet) |
| Packaging | — | Tray |
| Status Lingkungan Hidup | — | Active |