H5AN4G6NBJR-RDC vs H5AN4G8NBJR-VKC 比較
詳細並排比較 H5AN4G6NBJR-RDC 由 SK hynix 與 H5AN4G8NBJR-VKC 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | H5AN4G6NBJR-RDC | H5AN4G8NBJR-VKC |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gb | — |
| 組織 | 256M x 16 | — |
| 供應電壓 | 1.2 V | — |
| 介面 | CMOS, fully synchronous | — |
| Package Code | TFBGA (FBGA-96) | — |
| Package Shape | Rectangular | — |
| Package Width | 7.5 mm | — |
| Number of Terminals | 96 | — |
| 安裝類型 | Surface Mount | Surface Mount |
| Temperature Grade | OTHER (per Partstack listing); -I industrial option -40C to +95C per family datasheet | — |
| Self Refresh | Auto / Self Refresh | — |
| Data Mask Function | Yes | — |
| Asynchronous Reset | Yes | — |
| On-Die Termination | Dynamic ODT | — |
| ZQ Calibration | Yes | — |
| Write Leveling | Yes | — |
| CRC Function | Yes | — |
| Lead-Free / Halogen-Free | Yes (per datasheet cover: Lead-Free & Halogen-Free) | — |
| Speed Grade | -RDC (see manufacturer datasheet for validated data-rate bin) | — |
| 記憶體容量 | — | 4 Gb |
| Memory Organization | — | 512M x8 |
| 資料速率 | — | 2666 Mbps (DDR4-2666) |
| Memory Interface | — | Parallel |
| Supply Voltage (VDD) | — | 1.2 V |
| 封裝 | — | FBGA-78 (7.5 x 11 mm) |
| Technology | — | CMOS DRAM |
| Volatile / Non-Volatile | — | Volatile |
| 工作溫度 | — | [DATA_NEEDED: operating temperature range] |
| CAS 延遲 | — | [DATA_NEEDED: CAS latency for 2666 grade] |
| Refresh | — | [DATA_NEEDED: refresh rate] |
| RoHS 狀態 | — | Compliant (Lead-Free & Halogen-Free per datasheet) |
| Packaging | — | Tray |
| 生命週期狀態 | — | Active |