H5AN4G6NBJR-UHC vs H5ANAG6NBJR-PBC Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5AN4G6NBJR-UHC disebabkan oleh SK hynix dan H5ANAG6NBJR-PBC disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | H5AN4G6NBJR-UHC | H5ANAG6NBJR-PBC |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Saiz Ingatan | 4 Gbit | — |
| Organisasi | 256M x 16 | [DATA_NEEDED: Organization x16/x8] |
| Clock Frequency | 1.6 GHz | — |
| Supply Voltage (VDD) | 1.14 V to 1.26 V | — |
| Technology | CMOS | — |
| Suhu Operasi | -40C to +95C | [DATA_NEEDED: Operating Temperature] |
| Kemasan | FBGA-96 (PBGA-96) | FBGA-96 |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Self Refresh | Auto self-refresh | Auto self-refresh |
| Data Mask Function | Yes (DM) | Yes |
| Asynchronous Reset | Yes (RESET_n) | Yes |
| On-Die Termination | Dynamic ODT | — |
| ZQ Calibration | Yes | Yes |
| Write Leveling | Yes | Yes |
| CRC Function | Yes (command/address CRC) | Yes |
| Status RoHS | Compliant | [DATA_NEEDED: RoHS Status] |
| Density | — | 16 Gb (2 GB) |
| Tegangan Pemberi Arus | — | 1.2 V |
| Generation Max Data Rate | — | 3200 MT/s (family max) |
| On-Chip Termination | — | Dynamic ODT |
| Speed Bin (PBC) | — | [DATA_NEEDED: Speed grade MT/s] |