H5AN4G8NBJR-RDC vs H5AN4G8NBJR-VKC Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5AN4G8NBJR-RDC disebabkan oleh SK hynix dan H5AN4G8NBJR-VKC disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | H5AN4G8NBJR-RDC | H5AN4G8NBJR-VKC |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | — |
| Organisasi | 512M x 8 | — |
| Antaramuka | DDR4 (Double Data Rate IV) | — |
| Kemasan | 78-ball FBGA | FBGA-78 (7.5 x 11 mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Tegangan Pemberi Arus | [DATA_NEEDED: VDD supply voltage] | — |
| Kadar Data | [DATA_NEEDED: speed grade Mbps] | 2666 Mbps (DDR4-2666) |
| Bank Architecture | 8 banks with 4 bank groups (x8) | — |
| Refresh | Auto-refresh and self-refresh | [DATA_NEEDED: refresh rate] |
| Temperature Grade | [DATA_NEEDED: operating temperature range] | — |
| Termination | On-Die Termination (ODT) | — |
| Status RoHS | Lead-Free & Halogen-Free (RoHS Compliant) | Compliant (Lead-Free & Halogen-Free per datasheet) |
| Process Technology | CMOS | — |
| Manufacturer | SK hynix | — |
| Family Series | H5AN4G4/8/6NBJR | — |
| Saiz Ingatan | — | 4 Gb |
| Memory Organization | — | 512M x8 |
| Memory Interface | — | Parallel |
| Supply Voltage (VDD) | — | 1.2 V |
| Technology | — | CMOS DRAM |
| Volatile / Non-Volatile | — | Volatile |
| Suhu Operasi | — | [DATA_NEEDED: operating temperature range] |
| Latensi CAS | — | [DATA_NEEDED: CAS latency for 2666 grade] |
| Packaging | — | Tray |
| Status Lingkungan Hidup | — | Active |