H5AN4G8NBJR-RDC vs H5AN4G8NBJR-VKC Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng H5AN4G8NBJR-RDC sa pamamagitan ng SK hynix at H5AN4G8NBJR-VKC sa pamamagitan ng SK hynix. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | H5AN4G8NBJR-RDC | H5AN4G8NBJR-VKC |
|---|---|---|
| Brand | SK hynix | SK hynix |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | — |
| Organisasyon | 512M x 8 | — |
| Interface | DDR4 (Double Data Rate IV) | — |
| Packhaging | 78-ball FBGA | FBGA-78 (7.5 x 11 mm) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Volte ng Pagbibigay | [DATA_NEEDED: VDD supply voltage] | — |
| Rate ng Data | [DATA_NEEDED: speed grade Mbps] | 2666 Mbps (DDR4-2666) |
| Bank Architecture | 8 banks with 4 bank groups (x8) | — |
| Refresh | Auto-refresh and self-refresh | [DATA_NEEDED: refresh rate] |
| Temperature Grade | [DATA_NEEDED: operating temperature range] | — |
| Termination | On-Die Termination (ODT) | — |
| Tindminan RoHS | Lead-Free & Halogen-Free (RoHS Compliant) | Compliant (Lead-Free & Halogen-Free per datasheet) |
| Process Technology | CMOS | — |
| Manufacturer | SK hynix | — |
| Family Series | H5AN4G4/8/6NBJR | — |
| Laki ng Memory | — | 4 Gb |
| Memory Organization | — | 512M x8 |
| Memory Interface | — | Parallel |
| Supply Voltage (VDD) | — | 1.2 V |
| Technology | — | CMOS DRAM |
| Volatile / Non-Volatile | — | Volatile |
| Temperature na Operasyon | — | [DATA_NEEDED: operating temperature range] |
| Latensya ng CAS | — | [DATA_NEEDED: CAS latency for 2666 grade] |
| Packaging | — | Tray |
| Katayuan ng Lifecycle | — | Active |