H5AN4G8NBJR-RDC vs H5AN4G8NBJR-VKC 比較
詳細並排比較 H5AN4G8NBJR-RDC 由 SK hynix 與 H5AN4G8NBJR-VKC 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | H5AN4G8NBJR-RDC | H5AN4G8NBJR-VKC |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | — |
| 組織 | 512M x 8 | — |
| 介面 | DDR4 (Double Data Rate IV) | — |
| 封裝 | 78-ball FBGA | FBGA-78 (7.5 x 11 mm) |
| 安裝類型 | Surface Mount | Surface Mount |
| 供應電壓 | [DATA_NEEDED: VDD supply voltage] | — |
| 資料速率 | [DATA_NEEDED: speed grade Mbps] | 2666 Mbps (DDR4-2666) |
| Bank Architecture | 8 banks with 4 bank groups (x8) | — |
| Refresh | Auto-refresh and self-refresh | [DATA_NEEDED: refresh rate] |
| Temperature Grade | [DATA_NEEDED: operating temperature range] | — |
| Termination | On-Die Termination (ODT) | — |
| RoHS 狀態 | Lead-Free & Halogen-Free (RoHS Compliant) | Compliant (Lead-Free & Halogen-Free per datasheet) |
| Process Technology | CMOS | — |
| Manufacturer | SK hynix | — |
| Family Series | H5AN4G4/8/6NBJR | — |
| 記憶體容量 | — | 4 Gb |
| Memory Organization | — | 512M x8 |
| Memory Interface | — | Parallel |
| Supply Voltage (VDD) | — | 1.2 V |
| Technology | — | CMOS DRAM |
| Volatile / Non-Volatile | — | Volatile |
| 工作溫度 | — | [DATA_NEEDED: operating temperature range] |
| CAS 延遲 | — | [DATA_NEEDED: CAS latency for 2666 grade] |
| Packaging | — | Tray |
| 生命週期狀態 | — | Active |