H5AN8G4NAFR-RDC vs H5AN8G6NAFR-RDC Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5AN8G4NAFR-RDC disebabkan oleh SK hynix dan H5AN8G6NAFR-RDC disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | H5AN8G4NAFR-RDC | H5AN8G6NAFR-RDC |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8Gb | — |
| Organisasi | 1G x 4 | 512M x 16 |
| Supply Voltage (VDD) | 1.2 V | — |
| Kemasan | FBGA-78 | — |
| Data Rate Class | [DATA_NEEDED: exact -RDC speed bin MT/s] | — |
| CAS Latency (CL) | [DATA_NEEDED: CL for -RDC bin] | — |
| Antaramuka | Synchronous, differential clock CK_t/CK_c | DDR4 (JEDEC-standard) |
| Bank Architecture | DDR4 bank-group architecture | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Status RoHS | Compliant (Lead-Free) | Compliant (Lead-Free & Halogen-Free) |
| Boson Bebas | Yes | — |
| Suhu Operasi | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Refresh | Self-refresh and auto-refresh per DDR4 SDRAM standard | — |
| Manufacturer | SK hynix | — |
| Datasheet Revision | Rev. 1.2 / Jul. 2017 | — |
| Memory Density | — | 8 Gb |
| Tegangan Pemberi Arus | — | 1.2 V |
| Access Mode | — | Multi Bank Page Burst |
| Package Code | — | TFBGA |
| Package Shape | — | Rectangular |
| Number of Terminals | — | 96 |
| Temperature Grade | — | OTHER (per Partstack listing) |
| Technology | — | CMOS |
| Speed Grade | — | -RDC (see datasheet for bin timing) |
| Family | — | H5AN8G4NAFR-xxC / H5AN8G8NAFR-xxC / H5AN8G6NAFR-xxC |
| Max Clock Rate | — | [DATA_NEEDED: max clock rate for -RDC bin] |