H5AN8G6NCJR-UHC vs H5AN8G6NCJR-VKC Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5AN8G6NCJR-UHC disebabkan oleh SK hynix dan H5AN8G6NCJR-VKC disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | H5AN8G6NCJR-UHC | H5AN8G6NCJR-VKC |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | Memory ICs | DRAM |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | — |
| Organisasi | 512M x 16 | — |
| Speed Grade | DDR4-2400 (2400 Mbps/pin) | — |
| Tegangan Pemberi Arus | 1.2 V | — |
| Kemasan | FBGA-96 (96-ball) | FBGA-96 |
| Jenis Pemasangan | Surface Mount (BGA) | Surface Mount |
| Suhu Operasi | 0C to +95C | 0C to +95C |
| Auto Self-Refresh | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask (DM) | Yes | — |
| Write Leveling | Yes | — |
| CRC Function | Yes | — |
| Dynamic On-Die Termination | Yes | — |
| ZQ Calibration | Yes | — |
| Lead-Free / Halogen-Free | Yes (per family datasheet) | Yes (per datasheet description) |
| Status RoHS | [DATA_NEEDED: RoHS certification statement] | Compliant |
| Saiz Ingatan | — | 8 Gbit |
| Memory Organization | — | 512M x 16 |
| Kadar Data | — | 2666 Mbps (MT/s) |
| Clock Frequency | — | 1.333 GHz |
| Supply Voltage (VDD) | — | 1.14 V to 1.26 V |
| Antaramuka | — | Parallel |
| Standby Current | — | 28 mA |
| Operating Current | — | 45 mA |
| Ciri-ciri | — | Auto self-refresh, auto precharge, asynchronous reset, data mask, write leveling, CRC, dynamic ODT, ZQ calibration |
| Status Lingkungan Hidup | — | Active |