H5AN8G6NDJR-XNC vs H5AN8G6NDJR Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5AN8G6NDJR-XNC disebabkan oleh SK hynix dan H5AN8G6NDJR disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | H5AN8G6NDJR-XNC | H5AN8G6NDJR |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | $55.68 | — |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Saiz Ingatan | 8 Gb | — |
| Memory Organization | 512M x16 | — |
| Kadar Data | 3200 Mbps | 3200 Mbps (DDR4-3200) |
| Supply Voltage (VDD) | 1.2 V (max 1.26 V) | — |
| Kemasan | FBGA-96 (13x7.5 mm) | 96-ball FBGA (13mm x 7.5mm) |
| Number of Terminals | 96 | 96 |
| Maximum Operating Temperature | 85 °C | 85 °C |
| Input/Output Type | COMMON | — |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Boson Bebas | Yes | — |
| Auto Self-Refresh | Yes | — |
| Auto Precharge | Yes | — |
| Data Mask | Yes | — |
| Dynamic On-Chip Termination | Yes | — |
| ZQ Calibration | Yes | — |
| CRC Function | Yes | — |
| Write Leveling | Yes | — |
| Asynchronous Reset | Yes | — |
| Density | — | 8 Gb |
| Organisasi | — | 512M x 16 |
| Tegangan Pemberi Arus | — | 1.2 V |
| Maximum Supply Voltage (Vsup) | — | 1.26 V |
| Burst Length | — | 8 (BL8), 4 (BC4) |
| Latensi CAS | — | 22 cycles (at 3200 Mbps) |
| Access Mode | — | Multi Bank Page Burst |
| JESD-30 Code | — | R-PBGA-B96 |
| Ciri-ciri | — | Auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic ODT, ZQ calibration, CRC, write leveling |