H5AN8G8NCJR-RDC vs H5AN8G8NCJR-VKC Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5AN8G8NCJR-RDC disebabkan oleh SK hynix dan H5AN8G8NCJR-VKC disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | H5AN8G8NCJR-RDC | H5AN8G8NCJR-VKC |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM (volatile) |
| Density | 8 Gb (1 GB) | — |
| Organisasi | x8 | — |
| Kadar Data | up to 2666 Mbps | 2666 Mbps/pin |
| Tegangan Pemberi Arus | 1.2 V (VDD) | — |
| Antaramuka | DDR4 (JEDEC standard) | Parallel (DDR4) |
| Bank Architecture | 4 bank groups x 4 banks | — |
| Burst Length | BL8 | — |
| Kemasan | 78-ball FBGA | FBGA-78 (78-ball fine-pitch BGA) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Operasi | [DATA_NEEDED: operating temperature range for -RDC suffix] | 0C to +85C |
| Latensi CAS | [DATA_NEEDED: CAS latency for -RDC speed grade] | [DATA_NEEDED: CAS Latency] |
| Generation | C-die family (NCJR) | — |
| Lead Free | Yes | — |
| Boson Bebas | Yes | — |
| Status RoHS | Compliant | Compliant |
| Saiz Ingatan | — | 8 Gbit |
| Memory Organization | — | 1G x 8 |
| Clock Frequency | — | 1.6 GHz |
| Supply Voltage (VDD) | — | 1.14 V to 1.26 V (1.2 V class) |
| Operating Current (typ) | — | 30 mA |
| Standby Current (typ) | — | 3 mA |
| Auto Self-Refresh | — | Yes |
| Data Mask Function | — | Yes |
| Dynamic On-Chip Termination (ODT) | — | Yes |
| Asynchronous Reset | — | Yes |
| ZQ Calibration | — | Yes |
| Write Leveling | — | Yes |
| CRC Function | — | Yes |
| Auto Precharge | — | Yes |
| Refresh Rate | — | [DATA_NEEDED: refresh period] |