H5AN8G8NCJR-RDC vs H5AN8G8NDJR-XNC Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5AN8G8NCJR-RDC disebabkan oleh SK hynix dan H5AN8G8NDJR-XNC disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | H5AN8G8NCJR-RDC | H5AN8G8NDJR-XNC |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb (1 GB) | — |
| Organisasi | x8 | — |
| Kadar Data | up to 2666 Mbps | 3200 MT/s (DDR4-3200) |
| Tegangan Pemberi Arus | 1.2 V (VDD) | — |
| Antaramuka | DDR4 (JEDEC standard) | Parallel |
| Bank Architecture | 4 bank groups x 4 banks | — |
| Burst Length | BL8 | — |
| Kemasan | 78-ball FBGA | FBGA-78 (7.5 x 11 mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Operasi | [DATA_NEEDED: operating temperature range for -RDC suffix] | — |
| Latensi CAS | [DATA_NEEDED: CAS latency for -RDC speed grade] | — |
| Generation | C-die family (NCJR) | — |
| Lead Free | Yes | — |
| Boson Bebas | Yes | — |
| Status RoHS | Compliant | — |
| Saiz Ingatan | — | 8 Gbit (1 G x 8) |
| Supply Voltage (VDD) | — | 1.14 V to 1.26 V (nominal 1.2 V) |
| I/O Voltage (VDDQ) | — | 1.14 V to 1.26 V (nominal 1.2 V) |
| Operating Temperature (TC) | — | 0°C to +95°C |
| Memory Organization | — | 1G x 8 |
| Clock Frequency | — | 1.6 GHz (I/O clock) |
| RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Packaging | — | Tray |
| Status | — | Active |