H5AN8G8NCJR-VKC vs H5AN8G8NCJR-VKI Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5AN8G8NCJR-VKC disebabkan oleh SK hynix dan H5AN8G8NCJR-VKI disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | H5AN8G8NCJR-VKC | H5AN8G8NCJR-VKI |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM (volatile) | DDR4 SDRAM |
| Saiz Ingatan | 8 Gbit | 8 Gb |
| Memory Organization | 1G x 8 | 1G x8 |
| Kadar Data | 2666 Mbps/pin | 2666 Mbps |
| Clock Frequency | 1.6 GHz | — |
| Supply Voltage (VDD) | 1.14 V to 1.26 V (1.2 V class) | — |
| Operating Current (typ) | 30 mA | — |
| Standby Current (typ) | 3 mA | — |
| Suhu Operasi | 0C to +85C | [DATA_NEEDED: Operating Temperature] |
| Kemasan | FBGA-78 (78-ball fine-pitch BGA) | FBGA-78 |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Antaramuka | Parallel (DDR4) | Parallel |
| Auto Self-Refresh | Yes | — |
| Data Mask Function | Yes | — |
| Dynamic On-Chip Termination (ODT) | Yes | — |
| Asynchronous Reset | Yes | — |
| ZQ Calibration | Yes | — |
| Write Leveling | Yes | — |
| CRC Function | Yes | — |
| Auto Precharge | Yes | — |
| Status RoHS | Compliant | [DATA_NEEDED: RoHS Status] |
| Latensi CAS | [DATA_NEEDED: CAS Latency] | — |
| Refresh Rate | [DATA_NEEDED: refresh period] | — |
| Tegangan Pemberi Arus | — | 1.2 V |
| Memory Format | — | DRAM |
| Volatile | — | Yes |
| Grade | — | Industrial (I suffix) |
| Technology | — | CMOS |
| Product Family | — | H5AN8G8NCJR-xxC/xI DDR4 SDRAM |
| Packaging | — | Tray |
| Product Status | — | Active |